PART |
Description |
Maker |
NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CALMIRCO[California Micro Devices Corp]
|
NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell California Eastern Laboratories, Inc.
|
NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp. NEC[NEC]
|
RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4 NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp. RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
HSG2004 HSG2004TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
NESG3032M14-T3-A NESG3032M14-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
BFP750-15 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies A...
|
BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
2SC941 2SC941-O 2SC941-R 2SC941TM 2SC941-Y 2SC942 |
TRANSISTOR SILICON NPN EPIITAXIAL TYPE 晶体管型硅npn型EPIITAXIAL SMA MALE TO TNC MALE; 18GHz PRECISION TEST CABLE ASSEMBLY; WIDEBAND COVERAGE DC - 18 GHZ TEST CABLES. FLEXIBLE FOR EASY CONNECTION AND BEND RADIUS NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) NPN EPITAXIAL TYPE (HIGH, AM, AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) From old datasheet system
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|